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| SMD Type HEXFET Power MOSFET KRF7317 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 *2 *2 EAS IAR EAR dv/dt VGS TJ, TSTG R 92A/ -77A/ s, VDD s, VDD 10sec. JA Symbol VDS ID ID IDM IS PD N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 12 P-Channel -20 -5.3 -4.3 -21 -2.5 Unit V A W 150 -2.9 mJ A mJ -5 V/ ns V Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *1 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 *1 N-Channel ISD P-Channel ISD 4.1A, di/dt -2.9A, di/dt -55 to + 150 62.5 150 150 /W V(BR)DSS, TJ V(BR)DSS, TJ *2 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7317 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 4.5V, ID = 6.0A*1 VGS = 2.7V, ID = 5.2A*1 VGS = -4.5V, ID = -2.9A*1 VGS = -2.7V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =10V, ID = 6.0A*1 VDS = -10V, ID = -1.5A*1 VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 55 VDS = -16V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -2.9A,VDS = -16V,VGS = -4.5V N-Channel VDD = 10V,ID = 1.0A,RG = 6.0 RD = 10 P-Channel VDD = -10V,ID = -2.9A,RG = 6.0 RD = 3.4 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 15V,f = 1.0MHz P-Channel VGS = 0V,VDS = -15V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 20 -20 Typ Max Unit V 0.027 0.031 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 0.7 -0.7 20 5.9 1.0 -1.0 5.0 -25 100 100 18 19 2.2 4.0 6.2 7.7 8.1 15 17 40 38 42 31 49 900 780 430 470 200 240 27 29 3.3 6.1 9.3 12 12 22 25 60 57 63 47 73 TJ V/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance VGS(th) gfs V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS = 12V nA N-Channel ID =6.0A,VDS = 10V,VGS =4.5V nC ns pF 2 www.kexin.com.cn SMD Type KRF7317 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*3 TJ = 25 , IS = -2.9A, VGS = 0V*3 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 ,IF =-2.9A,di/dt=-100A/ s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch s*1 P-Ch N-Ch P-Ch 0.72 -0.78 52 47 58 49 Min Typ Max 2.5 -2.5 26 -21 1.0 -1.0 77 71 86 73 IC IC Unit A Body Diode) *2 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. *3 N-Channel Starting TJ = 25 , L = 12mH RG = 25 , IAS = 4.1A. P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.9A. www.kexin.com.cn 3 |
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